View SF150BA50_8854243.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

q %4 % ( 4 4 ( 4 e i u y t w 1 fca50cc50 mosfet module ul;e76102 m 1 name plate 107.5 ? ~ 93 ? 35 ? 30 max 31 max 4 17 4 3 v. tab 110 5 3 2 1 unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe electrical charactistics tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings fca50cc50 unit v dss drain-source voltage 500 v v gss gate-source voltage ? 20 v i d drain current dc pulse duty 55% 50 a i dp 100 -i d source current 50 a p t total power dissipation tc 1 25 ? 330 w tj channel temperature 40 up 150 ? tstg storage temperature 40 up 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m5 recommended value 2.5 - 3.9 25 - 40 4.7 48 n k m kgf k b recommended value 1.5 - 2.5 15 - 25 2.7 28 mass typical value 240 g symbol item conditions ratings min. typ. max. ? 1.0 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 1.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 500v ma 500 v br dss darin-source breakdown voltage v gs 1 0v | i d 1 1ma v 1.0 5.0 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 140 r ds on drain-source on-state resistance i d 1 25a | v gs 1 15v m
3.5 v ds on drain-source on-state voltage i d 1 25a | v gs 1 15v v 30 gfs forward transconductance v ds 1 10v | i d 1 25a s 10000 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 1900 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 750 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 60 tr switching time rise time turn-on delay time fall time turn-off delay time v dd 1 300v | v gs 1 15v i d 1 25a | r g 1 5
ns 100 td on 520 tf 140 td off 2.0 v sds diode forward voltage i s 1 25a | v gs 1 0v v 80 100 trr reverse recovery time i s 1 25a | v gs 1 5v | di / dt 1 100a / s ns 0.38 1.67 rth j-c thermal resistance mosfet diode ? / w fca50cc50 is a dual power mosfet module designed for fast swiching applications of high voltage and current. 2 devices are serial connected with a fast recovery diode uss ? 100ns reverse connected across each mosfet. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 50a, v dss 1 500v ? suitable for high speed switching applications. ? low on resistance. ? wide safe operating areas. ? t rr ? 100ns fast recovery diode for free wheel. applications ups cvcf , motor control, switching power supply, etc.
2 fca50cc50 0vuqvu$ibsbdufsjtujdt 5zqjdbm 5k1 ? 1vmtf5ftu 7 ( t17 7 7 7 7 7 %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 %( 7 7 %4 5k ? 1vmtf5ftu 7 'psxbse5sbotgfs$ibsbdufsjtujdt 5zqjdbm %sbjo$vssfou* % " (buf4pvsdf7pmubhf7 ( 7 5k ? 5zqjdbm 1vmtf5ftu 7 %4 7 'psxbse5sbotdpoevdubodf7t %sbjo$vssfou 'psxbse5sbotdpoevdubodf6 5 b 4 %sbjo$vssfou " 5k ? 5k ? 5k ? 1vmtf5ftu 5zqjdbm %sbjo4pvsdf0o4ubuf3ftjtubodf7t %sbjo$vssfou } } } %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
%sbjo$vssfou " 5k ? 7 ( t 7 g .)[ $jtt $ptt $stt *oqvu$bqbdjubodf 0vuqvu$bqbdjubodf 3fwfstf5sbotgfs$bqbdjubodf 5zqjdbm $bqbdjubodf % %sbjo4pvsdf7pmubhf7 ( 7 5d ? 1 x t 1 x t %$ 1 x n t 1 x n t /po3fqfujujwf 4bgf0qfsbujoh"sfb %sbjo4pvsdf7pmubhf7 ( 7 %sbjo$vssfou* % "
3 fca50cc50 7 ( t 7 5k ? 5k ? 1vmtf5ftu 5zqjdbm } } } } } 4pvsdf$vssfou* ( " %sbjo4pvsdf7pmubhf7 ( ( 7 'psxbse7pmubhfpg'sff8iffmjoh%jpef 7 (4 ? 7 ejteu "t uss mss uss mss ? ? 5zqjdbm 3fwfstf3fdpwfsz$ibsbdufsjtujdt 3fwfstf3fdpwfsz$vssfou a a " 3fwfstf3fdpwfsz5jnfu a a ot 4pvsdf$vssfou ( " .by .by ntfdtfd tfdtfd 5sbotjfou5ifsnbm*nqfebodf "$ ( ) 5ifsnbm*nqfebodf 9 2 ?, 5jnf c tfd < < < < < < < < < < .by ntfdtfd ntfdntfd 5sbotjfou5ifsnbm*nqfebodf $ 5ifsnbm*nqfebodf 9 2 ?, 5jnf c tfd < < < < < < < < < <
q %4 % ( 4 4 ( 4 e i u y t w 4 fca75cc50 mosfet module ul;e76102 m name plate 107.5 ? ~ 93 ? 35 ? 30 max 31 max 4 17 4 3 v. tab 110 5 3 2 1 unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe electrical characteristics tj 1 25 ? symbol item conditions ratings fca75cc50 unit v dss drain-source voltage 500 v v gss gate-source voltage ? 20 v i d drain current dc pulse duty 35% 75 a i dp 150 -i d source current 75 a p t total power dissipation tc 1 25 ? 430 w tj channel temperature 40 up 150 ? tstg storage temperature 40 up 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m5 recommended value 2.5 - 3.9 25 - 40 4.7 48 n k m kgf k b recommended value 1.5 - 2.5 15 - 25 2.7 28 mass typical value 240 g symbol item conditions ratings min. typ. max. ? 1.0 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 1.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 500v ma 500 v br dss darin-source breakdown voltage v gs 1 0v | i d 1 1ma v 1.0 5.0 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 110 r ds on drain-source on-state resistance i d 1 40a | v gs 1 15v m
4.4 v ds on drain-source on-state voltage i d 1 40a | v gs 1 15v v 40 gfs forward transconductance v ds 1 10v | i d 1 40a s 13500 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 2500 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 1000 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 70 tr switching time rise time turn-on delay time fall time turn-off delay time v dd 1 300v | v gs 1 15v i d 1 40a | r g 1 5
ns 140 td on 700 tf 210 td off 2.5 v sds diode forward voltage i s 1 40a | v gs 1 0v v 80 100 trr reverse recovery time i s 1 40a | v gs 1 5v | di / dt 1 100a / s ns 0.29 1.67 rth j-c thermal resistance mosfet diode ? / w fca75cc50 is a dual power mosfet module designed for fast swiching applications of high voltage and current. 2 devices are serial connected with a fast recovery diode uss ? 100ns reverse connected across each mosfet. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 75a, v dss 1 500v ? suitable for high speed switching applications. ? low on resistance. ? wide safe operating areas. ? t rr ? 100ns fast recovery diode for free wheel. applications ups cvcf , motor control, switching power supply, etc.
5 fca75cc50 0vuqvu$ibsbdufsjtujdt 5zqjdbm 5k1 ? 1vmtf5ftu 7 ( t17 7 7 7 7 7 %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 ( 7 5k ? 7 %4 7 1vmtf5ftu 'psxbse5sbotgfs$ibsbdufsjtujdt 5zqjdbm (buf4pvsdf7pmubhf7 ( 7 %sbjo$vssfou* % " 5k ? 7 %4 7 1vmtf5ftu 5zqjdbm
%sbjo$vssfou " 'psxbse5sbotdpoevdubodf6 5 b 4 'psxbse5sbotdpoevdubodf7t %sbjo$vssfou 7 (4 7 1vmtf5ftu 5k ? 5k ? 5zqjdbm 5k ? } } } %sbjo$vssfou " %sbjo4pvsdf0o4ubuf3ftjtubodf7t %sbjo$vssfou %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
5k ? $ptt $jtt $stt 7 (4 7 g .)[ $bqbdjubodf % %sbjo4pvsdf7pmubhf7 ( 7 *oqvu$bqbdjubodf 0vuqvu$bqbdjubodf 3fwfstf5sbotgfs$bqbdjubodf 5zqjdbm 1 x t 1x t 1 x nt 1x nt % $ /po3fqfujujwf ? 5d %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 ( 7 4bgf0qfsbujoh"sfb
6 fca75cc50 5k ? 5k ? 7 (4 7 1vmtf5ftu 5zqjdbm 'psxbse7pmubhfpg'sff8iffmjoh%jpef } } } 4pvsdf$vssfou* ( " %sbjo4pvsdf7pmubhf7 ( ( 7 ejt eu "t 7 (4 7 5zqjdbm ? ? mss uss mss uss 3fwfstf3fdpwfsz$ibsbdufsjtujdt 3fwfstf3fdpwfsz$vssfou a a " 3fwfstf3fdpwfsz5jnfu a a ot 4pvsdf$vssfou ( " .byjnvn ntfd tfd tfd ntfd 5sbotjfou5ifsnbm*nqfebodf "$ ( ) 5ifsnbm*nqfebodf 9 2 ?, 5jnf c tfd < < < < < < < < < < ntfd ntfd ntfd tfd .byjnvn 5sbotjfou5ifsnbm*nqfebodf $ 5ifsnbm*nqfebodf 9 2 ?, 5jnf c tfd < < < < < < < < < <
7 fba50ca45/50 mosfet module ul;e76102 m fba50ca45/50 is a dual power mosfet module designed for fast swiching applications of high voltage and current. 2 devices are serial connected. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 50a, v dss 1 500v ? suitable for high speed switching applications. ? low on resistance. ? wide safe operating areas. applications ups cvcf , motor control, switching power supply, etc. 107.5 ? 0.6 19 14 3 2 19 19 name plate 2 6.5 93 ? 0.3 35 ? 0.6 31max 30max 4 m5 8 4 17 4 7 6 5 tab 110 5 unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe electrical characteristics tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings fba50ca45 fba50ca50 unit v dss drain-source voltage 450 500 v v gss gate-source voltage ? 20 v i d drain current d.c. pulse 50 a i dp 100 -i d source current 50 a p t total power dissipation tc 1 25 ? 320 w tj channel temperature 150 ? tstg storage temperature 40 up 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m5 recommended value 2.5 - 3.9 25 - 40 4.7 48 n k m kgf k b recommended value 1.5 - 2.5 15 - 25 2.7 28 mass typical value 220 g symbol item conditions ratings min. typ. max. ? 1.0 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 1.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 500v ma 450 v br dss drain-source breakdown voltage fba50ca45 fba50ca50 v gs 1 0v | i d 1 1ma v 500 1.0 5.0 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 120 r ds on drain-source on-state resistance i d 1 25a | v gs 1 15v m
3.0 v ds on drain-source on-state voltage i d 1 25a | v gs 1 15v v 30 gfs forward transconductance v ds 1 10v | i d 1 25a s 10000 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 1900 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 750 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 60 tr switching time rise time turn-on delay time fall time turn-off delay time r l 1 12
| r gs 1 50
| v gs 1 15v i d 1 25a | r g 1 5
ns 60 td on 650 tf 130 td off 1.5 v sds diode forward voltage ? i d 1 25a | v gs 1 0v v 700 trr reverse recovery time ? i d 1 25a | v gs 1 0v | di / dt 1 100a / s ns 0.39 rth j-c thermal resistance ? / w q %4 % ( 4 4 ( 4 4 i u y t w er
8 fba50ca45/50 7 (4 7 5k ? 1vmtf5ftu 7 7 7 7 7 0vuqvu$ibsbdufsjtujdt 5zqjdbm %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 ( 7 7 %4 7 5k ? 1vmtf5ftu 'psxbse5sbotgfs$ibsbdufsjtujdt 5zqjdbm %sbjo$vssfou* % " (buf4pvsdf7pmubhf7 ( 7 7 %4 7 5k ? 1vmtf5ftu 'psxbse5sbotdpoevdubodf7t %sbjo$vssfou %sbjo$vssfou " 'psxbse5sbotdpoevdubodf6 5 b 4 5k ? 5k ? 5k ? 7 (4 7 1vmtf5ftu 5zqjdbm } } } %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
%sbjo$vssfou " %sbjo4pvsdf0o4ubuf3ftjtubodf7t %sbjo$vssfou $jtt 7 (4 7 g .)[ 5k ? $ptt $stt *oqvu$bqbdjubodf 0vuqvu$bqbdjubodf 3fwfstf5sbotgfs$bqbdjubodf 5zqjdbm $bqbdjubodf % %sbjo4pvsdf7pmubhf7 ( 7 1 x t t nt nt %$ '#"$" '#"$" 5k ? /po3fqfujujwf %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 ( 7 4bgf0qfsbujoh"sfb
9 fba50ca45/50 7 (4 7 5k ? 5zqjdbm 1vmtf5ftu 'psxbse7pmubhfpg'sff8iffmjoh%jpef } } } } } } 4pvsdf$vssfou* 4 " 4pvsdf%sbjo7pmubhf7 ( ( 7 .by 5sbotjfou5ifsnbm*nqfebodf 5ifsnbm*nqfebodf 9 ?, < < < < < < < < < < .by 5jnf c tfd % /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf 7t1vmtf8jeui } } } } < < < < < < 1vmtf8jeui1 , tfd /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf a b c | 9 ? 2' c 7 9 ? 2
10 fba75ca45/50 mosfet module ul;e76102 m fba75ca45/50 is a dual power mosfet module designed for fast swiching applications of high voltage and current. 2 devices are serial connected. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 75a, v dss 1 500v ? suitable for high speed switching applications. ? low on resistance. ? wide safe operating areas. applications ups cvcf , motor control, switching power supply, etc. 107.5 ? 0.6 19 14 3 2 19 19 name plate 2 6.5 93 ? 0.3 35 ? 0.6 31max 30max 4 m5 8 4 17 4 7 6 5 tab 110 5 unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings fba75ca45 fba75ca50 unit v dss drain-source voltage 450 500 v v gss gate-source voltage ? 20 v i d drain current d.c. pulse duty 1 36% 75 a i dp 150 -i d source current 75 a p t total power dissipation tc 1 25 ? 400 w tj channel temperature 150 ? tstg storage temperature 40 up 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m5 recommended value 2.5 - 3.9 25 - 40 4.7 48 n k m kgf k b recommended value 1.5 - 2.5 15 - 25 2.7 28 mass typical value 220 g q %4 % ( 4 4 ( 4 4 i u y t w er electrical characteristics tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings min. typ. max. ? 1.0 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 1.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 500v ma 450 v br dss drain-source breakdown voltage fba75ca45 fba75ca50 v gs 1 0v | i d 1 1ma v 500 1.0 5.0 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 0.10 r ds on drain-source on-state resistance i d 1 40a | v gs 1 15v
4.0 v ds on drain-source on-state voltage i d 1 40a | v gs 1 15v v 40 gfs forward transconductance v ds 1 10v | v d 1 40a s 13500 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 2500 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 1000 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 60 tr switching time rise time turn-on delay time fall time turn-off delay time r l 1 7.5
| r gs 1 50
| v gs 1 15v i d 1 40a | r g 1 5
ns 120 td on 700 tf 210 td off 1.5 v sds diode forward voltage ? i d 1 40a | v gs 1 0v v 700 trr reverse recovery time ? i d 1 40a | v gs 1 0v | di / dt 1 100a / s ns 0.31 rth j-c thermal resistance ? / w
11 fba75ca45/50 5k ? 7 (4 7 1vmtf5ftu 7 7 7 7 7 0vuqvu$ibsbdufsjtujdt 5zqjdbm %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 ( 7 5k ? 7 %4 7 1vmtf5ftu 'psxbse5sbotgfs$ibsbdufsjtujdt 5zqjdbm %sbjo$vssfou* % " (buf4pvsdf7pmubhf7 ( 7 1vmtf5ftu 7 %4 7 5k ? 5zqjdbm
'psxbse5sbotdpoevdubodf7t %sbjo$vssfou } %sbjo$vssfou " 'psxbse5sbotdpoevdubodf6 5 b 4 1vmtf5ftu 7 (4 7 * % " * % " %sbjo4pvsdf0o4ubuf3ftjtubodf7t $iboofm5fnqfsbuvsf } } $iboofm5fnqfsbuvsf) 9 ? %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
1vmtf5ftu 7 (4 7 5k ? 5k ? 5k ? } } %sbjo$vssfou " %sbjo4pvsdf0o4ubuf3ftjtubodf7t %sbjo$vssfou %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
$jtt 7 (4 7 g .)[ 5k ? $ptt $stt *oqvu$bqbdjubodf 0vuqvu$bqbdjubodf 3fwfstf5sbotgfs$bqbdjubodf 5zqjdbm $bqbdjubodf % %sbjo4pvsdf7pmubhf7 %4 7
12 fba75ca45/50 1 x t t n t n t %$ '#"$" '#"$" 4bgf0qfsbujoh"sfb %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 ( 7 5k ? 5zqjdbm
1vmtf5ftu 'psxbse7pmubhfpg'sff8iffmjoh%jpef } } } } } } 4pvsdf$vssfou?* 4 " 4pvsdf%sbjo7pmubhf7 ( ( 7 .by ntfd tfd tfd ntfd .by 5sbotjfou5ifsnbm*nqfebodf 5ifsnbm*nqfebodf 9 ?, 5jnf c tfd < < < < < < < < < < % /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf 7t1vmtf8jeui } } } } < < < < < < 1vmtf% , tfd /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf a b c | 9 ? 2' c 7 9 ? 2
13 sf100ba50 mosfet module ul;e76102 m sf100ba50 is a isolated power mosfet module designed for fast swiching applications of high voltage and current. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 100a, v dss 1 500v ? suitable for high speed switching applications. ? low on resistance. ? wide safe operating areas. ? t rr ? 700ns applications ups cvcf , motor control, switching power supply, etc. 80.5 nby 2-m5 yyyy efquinn 5"# 52.5 nby 12 34.0 ? 65.0 ? ? ? nby nby name plate 3 4 unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe electrical characteristics tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings sf100ba50 unit v dss drain-source voltage 500 v v gss gate-source voltage ? 20 v i d drain current dc pulse duty 1 43% 100 a i dp 200 -i d source current 100 a p t total power dissipation tc 1 25 ? 600 w tj channel temperature 40 ? 150 ? tstg storage temperature 40 ? 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m5 recommended value 2.5 ? 3.9 25 ? 40 4.7 48 n k m kgf k b recommended value 1.5 ? 2.5 15 ? 25 2.7 28 mass typical value 160 g symbol item conditions ratings min. typ. max. ? 2.0 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 1.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 500v ma 500 v br dss darin-source breakdown voltage v gs 1 0v | i d 1 1ma v 1.0 5.0 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 70 r ds on drain-source on-state resistance i d 1 50a | v gs 1 15v m
3.5 v ds on drain-source on-state voltage i d 1 50a | v gs 1 15v v 60 gfs forward transconductance v ds 1 10a | i d 1 50a s 20000 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 3800 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 1500 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 70 tr switching time rise time turn-on delay time fall time turn-off delay time r l 1 6
| r gs 1 50
| v gs 1 15v i d 1 50a | r g 1 5
s 120 td on 1100 tf 280 td off 1.5 v sds diode forward voltage i d 1 50a | v gs 1 0v v 700 trr reverse recovery time i d 1 50a | v gs 1 0v | di / dt 1 100a / s ns 0.21 rth j-c thermal resistance ? / w q 4 4 ( w
14 sf100ba50 7 (4 7 7 7 7 7 7 1vmtf5ftu 5k ? 0vuqvu$ibsbdufsjtujdt 5zqjdbm %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 %4 7 1vmtf5ftu 7%4 7 5k ? 'psxbse5sbotgfs$ibsbdufsjtujdt 5zqjdbm %sbjo4pvsdf7pmubhf7 (4 7 %sbjo$vssfou* % " 7 %4 7 1vmtf5ftu 5k ? 5zqjdbm 'psxbse5sbotdpoevdubodf7t %sbjo$vssfou 'psxbse5sbotdpoevdubodf6 5 b 4 %sbjo$vssfou* % " 7 (4 7 1vmtf5ftu 5zqjdbm 5k ? 5k ? 5k ? %sbjo4pvsdf0o4ubuf3ftjtubodf7t %sbjo$vssfou } } } %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
%sbjo$vssfou* % " 7 (4 7 5k ? g .)[ $jtt $ptt $stt *oqvu$bqbdjubodf 0vuqvu$bqbdjubodf 3fwfstf5sbotgfs$bqbdjubodf 5zqjdbm $bqbdjubodf % %sbjo4pvsdf7pmubhf7 %4 7 5d ? 18 t t nt nt %$ /po3fqfujujwf %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 %4 7 4bgf0qfsbujoh"sfb
15 sf100ba50 7 (4 7 5k ? 5zqjdbm 1vmtf5ftu 'psxbse7pmubhfpg'sff8iffmjoh%jpef } } } } } } 4pvsdf$vssfou ? * 4 " 4pvsdf%sbjo7pmubhf7 ( ( 7 .by ntt .by tnt 5sbotjfou5ifsnbm*nqfebodf 5ifsnbm*nqfebodf 9 ? 2 ?, 5jnf u tfd < < < < < < < < < < .by .by % % /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf 7t1vmtf8jeui < < < < < < /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf a b c 1vmtf8jeui% , tfd | 9 ? 2' c 7 9 ? 2
16 SF150BA50 mosfet module ul;e76102 m q 4 4 ( w SF150BA50 is a isolated power mosfet module designed for fast swiching applications of high voltage and current. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 150a, v dss 1 500v ? suitable for high speed switching application. ? low on resistance. ? wide safe operating areas. applications ups cvcf , motor control, switching power supply, etc. 80.5 nby 2-m5 yyyy efquinn 5"# 52.5 nby 12 34.0 ? 65.0 ? ? ? nby nby name plate 3 4 unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe electrical characteristics tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings SF150BA50 unit v dss drain-source voltage 500 v v gss gate-source voltage ? 20 v i d drain current dc pulse duty 1 35% 150 a i dp 300 -i d source current 150 a p t total power dissipation tc 1 25 ? 780 w tj channel temperature 40 up 150 ? tstg storage temperature 40 up 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m5 recommended value 2.5 - 3.9 25 - 40 4.7 48 n k m kgf k b recommended value 1.5 - 2.5 15 - 25 2.7 28 mass typical value 160 g symbol item conditions ratings min. typ. max. ? 2.0 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 2.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 500v ma 500 v br dss darin-source breakdown voltage v gs 1 0v | i d 1 1ma v 1.0 5.0 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 50 r ds on drain-source on-state resistance i d 1 75a | v gs 1 15v m
3.75 v ds on drain-source on-state voltage i d 1 75a | v gs 1 15v v 80 gfs forward transconductance v ds 1 10v | i d 1 75a s 27000 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 5000 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 2000 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 90 tr switching time rise time turn-on delay time fall time turn-off delay time r l 1 4
| r gs 1 50
| v gs 1 15v i d 1 75a | r g 1 5
ns 180 td on 1400 tf 360 td off 1.5 v sds diode forward voltage i d 1 75a | v gs 1 0v v 700 trr reverse recovery time i d 1 75a | v gs 1 0v | di / dt 1 100a / s ns 0.16 rth j-c thermal resistance ? / w
17 SF150BA50 5k ? 7 (4 7 7 7 7 1vmtf5ftu 7 7 0vuqvu$ibsbdufsjtujdt 5zqjdbm %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf+ ( + 5k ? 7 %4 7 1vmtf5ftu 'psxbse5sbotgfs$ibsbdufsjtujdt 5zqjdbm (buf4pvsdf7pmubhf+ ( + %sbjo$vssfou* % " 5zqjdbm 5k ? 7 %4 7 1vmtf5ftu 5zqjdbm 'psxbse5sbotdpoevdubodf7t %sbjo$vssfou %sbjo$vssfou 'psxbse5sbotdpoevdubodf6 5 b ( 7 (4 7 * % " * % " 1vmtf5ftu %sbjo4pvsdf0o4ubuf3ftjtubodf7t $iboofm5fnqfsbuvsf } } $iboofm5fnqfsbuvsf) 9 ? %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
5k ? 5k ? 5k ? 1vmtf5ftu %sbjo4pvsdf0o4ubuf3ftjtubodf7t %sbjo$vssfou } } %sbjo$vssfou %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
$jtt $ptt 5k ? g .)[ 7 (4 7 $stt *oqvu$bqbdjubodf 0vuqvu$bqbdjubodf 3fwfstf5sbotgfs$bqbdjubodf 5zqjdbm %sbjo4pvsdf7pmubhf+ ( + $bqbdjubodf %
18 SF150BA50 1x t t n t n t %$ 5d ? /po3fqfujujwf 4bgf0qfsbujoh"sfb %sbjo4pvsdf7pmubhf7 ( 7 %sbjo$vssfou* % " 7 (4 7 1vmtf5ftu } } } } } } 4pvsdf%sbjo7pmubhf7 ( ( 7 'psxbse7pmubhfpg'sff8iffmjoh%jpef 4pvsdf$vssfou* 4 " ntt tnt 5sbotjfou5ifsnbm*nqfebodf < < < < < < < < < < 5ifsnbm*nqfebodf 9 2 ?, 5jnf c tfd .by .by % /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf 7t1vmtf8jeui < < < < < < | 9 ? 2' c 7 9 ? 2 /psnbmj[fe5sbotjfou5ifsnbm*nqfebotf a b c 1vmtf8jeui% , tfd
19 sf100cb100 mosfet module ul;e76102 m sf100cb100 is a isolated power mosfet module designed for fast swiching applications of high voltage and current with a fast recovery diode trr ?ot reverse connected. the mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ? i d 1 100a, v dss 1 1000v ? suitable for high speed switching applications. ? low on resistance. ? wide safe operating areas. ? t rr ? 300ns fast recovery diode for free wheel applications nby nby v. v. ? v ? nby nby nby % 4 4 ( unit a maximum ratings tj 1 25 ? vomfttpuifsxjtftqfdjgjfe electrical characteristics tj 1 25 ? vomfttpuifsxjtftqfdjgjfe symbol item conditions ratings sf100cb100 unit v dss drain-source voltage 1000 v v gss gate-source voltage ? 30 v i d drain current dc pulse 100 a i dp 200 -i d source current 100 a p t total power dissipation tc 1 25 ? 800 w tj channel temperature 40 up 150 ? tstg storage temperature 40 up 125 ? v iso isolation voltage r.m.s. a.c. 1minute 2500 v mounting torque mounting m6 terminal m6 recommended value 2.5 - 3.9 25 - 40 4.7 48 n k m kgf k b recommended value 2.5 - 3.9 25 - 40 4.7 48 terminal m4 recommended value 1.0 - 1.4 10 - 14 1.5 15 mass typical value 460 g symbol item conditions ratings min. typ. max. ? 0.1 unit i gss gate leakage current v gs 1? 20v | v ds 1 0v a 4.0 i dss zero gate voltage drain current v gs 1 0v | v ds 1 800v ma 1000 v br dss darin-source breakdown voltage v gs 1 0v | i d 1 1ma v 1.5 3.5 v gs th gate-source threshold voltage v ds 1 v gs | i d 1 10ma v 150 r ds on drain-source on-state resistance i d 1 100a | v gs 1 15v m
15 v ds on drain-source on-state voltage i d 1 100a | v gs 1 15v v 30 50 gfs forward transconductance v ds 1 10a | v d 1 75a s 16000 19200 ciss input capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 2900 4200 coss output capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 1800 2600 crss reverse transfer capacitance v gs 1 0v | v ds 1 25v | f 1 1.0mhz pf 150 tr switching time rise time turn-on delay time fall time turn-off delay time r l 1 6
| v gs 1 15v / 5v i d 1 100a | r g 1 2.2
ns 300 td on 600 tf 300 td off 1.8 v sds diode forward voltage i d 1 100a | v gs 1 0v v 300 trr reverse recovery time i d 1 100a | v gs 1 15v | di / dt 1 400a / s ns 0.16 0.64 rth j-c thermal resistance mosfet diode ? / w 4 %
20 sf100cb100 7 7 7 7 5k ? 5zqjdbm 1vmtf5ftu 7 (4 7 7 0vuqvu$ibsbdufsjtujdt %sbjo$vssfou* % " %sbjo4pvsdf7pmubhf7 %4 7 7 %4 7 5k ? 5k ? 5zqjdbm 1vmtf5ftu (buf4pvsdf7pmubhf7 (4 7 %sbjo$vssfou* % " 'psxbse5sbotgfs$ibsbdufsjtujdt 7 %4 7 5k ? 5k ? 5zqjdbm 1vmtf5ftu 'psxbse5sbotdpoevdubodf7t %sbjo$vssfou } %sbjo$vssfou* % " 'psxbse5sbotdpoevdubodf6 5 b ( 7 (4 7 * % " * % " 5zqjdbm 1vmtf5ftu %sbjo4pvsdf0o4ubuf3ftjtubodf7t $iboofm5fnqfsbuvsf } } } %sbjo4pvsdf0o4ubuf3ftjtubodf ' ( > =
$iboofm5fnqfsbuvsf5k? 7 7 (4 7 5k ? 5zqjdbm 1vmtf5ftu %sbjo4pvsdf0o4ubuf3ftjtubodf7t %sbjo$vssfou } } } } %sbjo4pvsdf0o4ubuf3ftjtubodf' ( > =
%sbjo$vssfou* % " 7 (4 7 g .)[ 5k ? 5zqjdbm
ciss coss crss *oqvu$bqbdjubodf 0vuqvu$bqbdjubodf 3fwfstf5sbotgfs$bqbdjubodf 5zqjdbm $bqbdjubodf % %sbjo4pvsdf7pmubhf7 %4 7 * % " 7 %% 7 5k ? 5zqjdbm 7 %% 7 *oqvu$ibshf (buf4pvsdf7pmubhf+ ( + (buf$ibshf& 6 = 5d ? /po3fqfujujwf 1x t 1x t 1x n t 1x n t %$ 4bgf0qfsbujoh"sfb %sbjo4pvsdf7pmubhf7 %4 7 %sbjo$vssfou* % "
21 sf100cb100 5k ? 5k ? 7 (4 7 5zqjdbm 1vmtf5ftu 'psxbse7pmubhfpg'sff8iffmjoh%jpef } } } 3fwfstf%sbjo$vssfou?* % " 4pvsdf%sbjo7pmubhf7 ( ( 7 5zqjdbm mss mss 2ss 2ss ejteu "t 7 (4 7 uss uss 5k ? 5k ? 3fwfstf3fdpwfsz$ibsbdufsjtujdt 3fwfstf3fdpwfsz5jnfu a a ot 3fwfstf3fdpwfsz$vssfou a a " 3fwfstf3fdpwfsz$ibshf& a a 4pvsdf$vssfou ( " us 7 (4 77 5k ? 7 %% 7 1x t 3 (
ue po
ug ue pgg
4xjudijoh$ibsbdufsjtujdt %sbjo$vssfou " 4xjudijoh5jnf c = b .by .by ntfd?tfd tfd?ntfd 5sbotjfou5ifsnbm*nqfebodf "$ ( ) 5ifsnbm*nqfebodf 9 ?, 5jnf c tfd < < < < < < < < < < .by tfd?ntfd ntfd?tfd .by 5sbotjfou5ifsnbm*nqfebodf $ 5ifsnbm*nqfebodf 9 ?, 5jnf c tfd < < < < < < < < < <

▲Up To Search▲

Price & Availability of SF150BA50

	To Download SF150BA50 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .